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| RB095B-90 Diodes Schottky barrier diode RB095B-90 Applications General rectification External dimensions (Unit : mm) 6.50.2 5.10.2 0.1 0.05 1.50.3 2.30.2 0.1 0.50.1 Land size figure 6.0 Features 1)Power mold type. (CPD3) 2) Low VF 3) High reliability 5.50.3 0.1 1.5 0.75 0.9 1 2 3 0.650.1 0.550.1 0.55 1.20.2 2.5 1.2 0.8 1.5 2.30.2 2.30.2 2.2 2-R0.3 1.05 1.74 2.0 0.5 CPD 2.3 2.3 Construction Silicon epitaxial planar 1.35 R OHM : CPD JEITA : SC-63 Manufacture Date 0.15 0.16 2.55 1 2 3 R0.45 Structure 0.95 24.5 0.5 Taping dimensions (Unit : mm) 4.00.1 2.00.05 8.00.1 1.550.1 0 2.50.1 0.40.1 7.50.05 10.10.1 6.80.1 8.00.1 3.00.1 2.70.2 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc (*1) Junction temperature Storage temperature (*1) Rating of per diode : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 6 45 150 -40 to +150 Unit V V A A Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Thermal impedance Symbol VF IR jc Min. Typ. Max. 0.75 150 6.0 Unit V A /W Conditions IF=3.0A VR=90V junction to case 13.50.2 Rev.A 16.00.2 3.0 2.0 9.50.5 1.6 1.6 6.0 1/3 RB095B-90 Diodes Electrical characteristic curves 10 100000 10000 Ta=150 Ta=125 1000 f=1MHz Ta=75 Ta=25 REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150 1 Ta=125 Ta=75 0.1 Ta=25 Ta=-25 1000 100 10 1 0.1 0.01 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 Ta=-25 10 0.01 0 100 200 300 400 500 600 700 800 900 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 740 FORWARD VOLTAGE:VF(mV) 200 Ta=25 IF=3A n=30pcs AVE:711.1mV 180 Ta=25 VR=90V n=30pcs 400 390 Ta=25 f=1MHz VR=0V n=10pcs REVERSE CURRENT:IR(uA) 140 120 100 80 60 40 20 AVE:13.7uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) 730 720 710 700 690 VF DISPERSION MAP 160 380 370 360 350 340 330 320 310 300 AVE:357.9pF 0 IR DISPERSION MAP Ct DISPERSION MAP 300 30 1000 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm RESERVE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 AVE:8.30ns 8.3ms 8.3ms 1cyc 100 AVE:86.0A 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 IFSM DISRESION MAP 1000 Ifsm 100 Rth(j-a) t 10 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 8 Rth(j-c) FORWARD POWER DISSIPATION:Pf(W) 10 D=1/2 6 Sin(180) DC 100 Mounted on epoxy board IM=100mA 1 1ms time IF=3A 4 2 300us 10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.01 0 0.1 1 10 100 1000 0 TIME:t(s) Rth-t CHARACTERISTICS 2 4 6 8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 10 Rev.A 2/3 RB095B-90 Diodes 5 15 0A 0V AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) Io t 10 D=1/2 DC T VR D=t/T VR=45V Tj=150 15 0A 0V t Io VR D=t/T VR=45V Tj=150 REVERSE POWER DISSIPATION:P R (W ) Sin(180) 3 DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 10 DC T D=1/2 5 2 5 Sin(180) Sin(180) 1 0 0 10 20 30 40 50 60 70 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 80 90 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta() Derating Curve (Io-Ta) 0 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc() Derating Curve (Io-Tc) 30 25 ELECTROSTATIC DDISCHARGE TEST ESD(KV) AVE:26.70kV 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k AVE:9.60kV ESD DISPERSION MAP Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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